Ordered arrays of defect-free GaN nanocolumns with very narrow excitonic emission line width-Reference-Cited by-同舟云学术

Ordered arrays of defect-free GaN nanocolumns with very narrow excitonic emission line width

Published:2019-11 Issue: Volume:525 Page:125189
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Fernando-Saavedra A.,Albert S.,Bengoechea-Encabo A.,Lopez-Romero D.,Niehle M.,Metzner S.,Schmidt G.,Bertram F.,Sánchez-García M.A.,Trampert A.,Christen J.,Calleja E.

Funder

Spanish project MICINN

German Research Foundation

European Regional Development Fund

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference28 articles.

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5. Improved Ti-mask selective-area growth (SAG) by Rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arrays;Kishino;J. Cryst. Growth,2009

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