Basal plane dislocation conversion near the epilayer/substrate interface in epitaxial growth of 4° off-axis 4H–SiC
Author:
Funder
Office of Naval Research
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference30 articles.
1. Step-controlled epitaxial growth of SiC: High quality homoepitaxy
2. Dislocation conversion in 4H silicon carbide epitaxy
3. Direct observation of dislocations propagated from 4H–SiC substrate to epitaxial layer by X-ray topography
4. Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes
5. A New Degradation Mechanism in High-Voltage SiC Power MOSFETs
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3. Effects of proton implantation for expansion of basal plane dislocations in SiC toward suppression of bipolar degradation: review and perspective;Japanese Journal of Applied Physics;2024-01-15
4. Anisotropic etching mechanisms of 4H-SiC: Experimental and first-principles insights;Journal of Semiconductors;2024-01-01
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