Effects of growth rate on InP nanowires morphology and crystal structure-Reference-Cited by-同舟云学术

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Effects of growth rate on InP nanowires morphology and crystal structure

Published:2013-11 Issue: Volume:383 Page:100-105
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Paiman S.,Gao Q.,Tan H.H.,Jagadish C.,Zhang X.,Zou J.

Funder

Network Overseas Attachment Training scheme

RUGS

Australian National Fabrication Facility (ANFF)

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference35 articles.

1. Highly polarized photoluminescence and photodetection from single indium phosphide nanowires;Wang;Science,2001

2. Single-nanowire electrically driven lasers;Duan;Nature,2003

3. Growth of nanowire superlattice structures for nanoscale photonics and electronics;Gudiksen;Nature,2002

4. Frequency single-electron transistor based on an InAs/InP heterostructure nanowire;Nilsson;Nano Letters,2008

5. Single-electron transistors in heterostructure nanowires;Thelander;Applied Physics Letters,2003

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1. Wavelength-tunable InAsP quantum dots in InP nanowires;Applied Physics Letters;2019-07-29

2. Electronic properties of wurtzite-phase InP nanowires determined by optical and magneto-optical spectroscopy;Applied Physics Reviews;2017-12

3. Magnetron Sputter Epitaxy of High-Quality GaN Nanorods on Functional and Cost-Effective Templates/Substrates;Energies;2017-09-02

4. Synthesis and properties of ultra-long InP nanowires on glass;Nanotechnology;2016-11-22

5. III–V nanowires and nanowire optoelectronic devices;Journal of Physics D: Applied Physics;2015-10-07

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