In situ X-ray diffraction monitoring of GaInN/GaN superlattice during organometalic vapor phase epitaxy growth-Reference-Cited by-同舟云学术

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In situ X-ray diffraction monitoring of GaInN/GaN superlattice during organometalic vapor phase epitaxy growth

Published:2014-05 Issue: Volume:393 Page:108-113
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Yamamoto Taiji^ORCID,Iida Daisuke,Kondo Yasunari,Sowa Mihoko,Umeda Shinya,Iwaya Motoaki,Takeuchi Tetsuya,Kamiyama Satoshi,Akasaki Isamu

Funder

Ministry of Education, Culture, Sports, Science and Technology of Japan

Strategic Research Foundation at Private Universities

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference31 articles.

1. Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap

2. Fundamental energy gap of GaN from photoluminescence excitation spectra

3. Generation of misfit dislocations by basal-plane slip in InGaN∕GaN heterostructures

4. Unusual properties of the fundamental band gap of InN

5. Theoretical possibilities of InxGa1−xN tandem PV structures

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth optimization of quantum-well-enhanced multijunction photovoltaics;Cell Reports Physical Science;2023-06

2. In situ stress measurements during MOCVD growth of thick N-polar InGaN;Journal of Applied Physics;2017-08-28

3. Deep-level defects related to the emissive pits in thick InGaN films on GaN template and bulk substrates;APL Materials;2017-01

4. Enhanced light output power of InGaN-based amber LEDs by strain-compensating AlN/AlGaN barriers;Journal of Crystal Growth;2016-08

5. GaN barrier layer dependence of critical thickness in GaInN/GaN superlattice on GaN characterized by in situ X-ray diffraction;Japanese Journal of Applied Physics;2016-04-22

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