Enhanced light output power of InGaN-based amber LEDs by strain-compensating AlN/AlGaN barriers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference30 articles.
1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
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4. Hole Compensation Mechanism of P-Type GaN Films
5. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
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