GaN barrier layer dependence of critical thickness in GaInN/GaN superlattice on GaN characterized by in situ X-ray diffraction
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/55/i=5S/a=05FD11/pdf
Reference28 articles.
1. Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters
2. Fundamental energy gap of GaN from photoluminescence excitation spectra
3. Generation of misfit dislocations by basal-plane slip in InGaN∕GaN heterostructures
4. Unusual properties of the fundamental band gap of InN
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