Segregation of the Eu impurity as function of its concentration in the melt for growing of the lead telluride doped crystals by the Bridgman method
Author:
Funder
European Social Fund
European Commission
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. M.P. Bellmann M.M' Hamdi, Journal of Crystal Growth 362 (2013) 93–98
2. Effect of accelerated crucible rotation on the segregation of impurities in vertical Bridgman growth of multi-crystalline silicon
3. Ga segregation during Czochralski-Si crystal growth with Ge codoping
4. Segregation control of vertical Bridgman growth of Ga-doped germanium crystals by accelerated crucible rotation: ACRT versus angular vibration
5. Segregation of boron in germanium crystal
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