Numerical and experimental studies on the Black Periphery Wafer in CZ Si growth-Reference-Cited by-同舟云学术

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Numerical and experimental studies on the Black Periphery Wafer in CZ Si growth

Published:2014-02 Issue: Volume:388 Page:42-47
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Su Wenjia,Zuo Ran,Lu Jinggang,Di Chenying,Cheng Xiaonong

Funder

National Natural Science Foundation for Young Scholars of China

National Natural Science Foundation for Young Scholars of Jiangsu province

Research Fund for the Doctoral Program of Higher Education of China

Scientific Research Foundation for Distinguished Technical scholars of Jiangsu University

Postdoctoral Research Funding Scheme of Jiangsu Province

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference34 articles.

1. Characterization of mc-Si directionally solidified in travelling magnetic fields;Kiessling;J. Cryst. Growth,2012

2. Influence of crystalline defects in Czochralski-grown Si multicrystal on minority carrier lifetime;Taishi;J. Cryst. Growth,2007

3. The effects of several growth parameters on the formation behavior of point defects in Czochralski-grown silicon crystals;Cho;J. Cryst. Growth,2006

4. Effects of defects and impurities on minority carrier lifetime in cast-grown polycrystalline silicon;Ohshita;J. Cryst. Growth,2005

5. Grown-in defects in silicon produced by agglomeration of vacancies and self-interstitials;Voronkov;J. Cryst. Growth,2008

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1. Flow instabilities driven by Prandtl number effect and rotation-depth coupling effect in the cylinder with a top disk;Physics of Fluids;2024-05-01

2. Design of follow-up superconducting Cusp magnetic field and system performance analysis of Czochralski single crystal furnace;Results in Physics;2023-10

3. Design and optimization of superconducting CUSP electromagnetic field structure based on a COMSOL-GMDH-MOSO hybrid strategy;Results in Physics;2023-08

4. Comprehensive characterization of efficiency limiting defects in the swirl-shaped region of Czochralski silicon;Solar Energy Materials and Solar Cells;2022-03

5. Considerations on the limitations of the growth rate during pulling of silicon crystals by the Czochralski technique for PV applications;Journal of Crystal Growth;2019-10

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