Considerations on the limitations of the growth rate during pulling of silicon crystals by the Czochralski technique for PV applications-Reference-Cited by-同舟云学术

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Considerations on the limitations of the growth rate during pulling of silicon crystals by the Czochralski technique for PV applications

Published:2019-10 Issue: Volume:524 Page:125168
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Friedrich Jochen^ORCID,Jung Thomas,Trempa Matthias,Reimann Christian,Denisov Alexey,Muehe Andreas

Funder

German Federal Ministry for Economic Affairs and Energy

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference17 articles.

1. ITRPV Roadmap. https://www.itrpv.vdma.org.

2. Czochralski growth of silicon crystals;von Ammon,2014

3. Proceedings of 6th PAMIR International Conference on Fundamental and Applied MHD;Ammon,2005

4. W. v. Ammon, Private communication.

5. Crystal twisting in Cz Si growth

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