Effects of defects and impurities on minority carrier lifetime in cast-grown polycrystalline silicon-Reference-Cited by-同舟云学术

Effects of defects and impurities on minority carrier lifetime in cast-grown polycrystalline silicon

Published:2005-02 Issue:1-2 Volume:275 Page:e491-e494
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Ohshita Y.,Nishikawa Y.,Tachibana M.,Tuong V.K.,Sasaki T.,Kojima N.,Tanaka S.,Yamaguchi M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference5 articles.

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4. Effects of grain boundary on impurity gettering and oxygen precipitation in polycrystalline sheet silicon

5. Y. Komatsu, Y. Takaba, S. Yasukawa, S. Okamoto, M. Shimizu, Proceedings of 12th Workshop on Crystalline Silicon Solar Cell Materials and Processes, 2002, p. 176.

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