Low-temperature growth of InN by MOCVD and its characterization
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. Electron mobilities in gallium, indium, and aluminum nitrides
2. Electron transport in wurtzite indium nitride
3. Transient electron transport in wurtzite GaN, InN, and AlN
4. Optical bandgap energy of wurtzite InN
5. Band Gap of Hexagonal InN and InGaN Alloys
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1. Effects of the growth parameters on the surface quality of InN films;Journal of Vacuum Science & Technology A;2024-01-01
2. Electron transport properties in thin InN layers grown on InAlN;Materials Science in Semiconductor Processing;2023-03
3. Structure and bandgap determination of InN grown by RP-MOCVD;Journal of Materials Science: Materials in Electronics;2022-07-20
4. Growth of well-oriented InN nanodots by magnetron sputtering with varying sputtering temperature;Journal of Vacuum Science & Technology B;2018-07
5. Role of dislocations and carrier concentration in limiting the electron mobility of InN films grown by plasma assisted molecular beam epitaxy;Journal of Applied Physics;2018-01-07
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