Facet-controlled three-step growth of high-quality GaN on sapphire substrates by mass-production-type metalorganic vapor phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
2. GaN Growth Using GaN Buffer Layer
3. High dislocation densities in high efficiency GaN‐based light‐emitting diodes
4. Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate
5. Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Growth of high-quality GaN on (1 0 0) Ga2O3 substrates by facet-controlled MOVPE;Journal of Crystal Growth;2019-10
2. Photoreflectance study of GaN grown on SiN treated sapphire substrate by MOVPE;Superlattices and Microstructures;2015-08
3. Growth of GaN and AlGaN on (100) β-Ga2O3 substrates;physica status solidi (c);2012-01-26
4. Reduction of Dislocations in GaN Epilayer Grown on Si (111) Substrates using a GaN Intermedial Layer;Chinese Physics Letters;2006-09
5. Nonlithographic Random Masking and Regrowth of GaN Microhillocks to Improve Light-Emitting Diode Efficiency;Japanese Journal of Applied Physics;2005-12-28
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