Sublimation growth of 3C–SiC on 6H–SiC seeds
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
1. 3C-SiC hetero-epitaxial growth on undulant Si(001) substrate
2. Thermodynamic considerations of the epitaxial growth of SiC polytypes
3. Artificially layered heteropolytypic structures based on SiC polytypes: molecular beam epitaxy, characterization and properties
4. The Preference of Silicon Carbide for Growth in the Metastable Cubic Form
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ge Mediated Surface Preparation for Twin Free 3C-SiC Nucleation and Growth on Low Off-Axis 4H-SiC Substrate;ECS Journal of Solid State Science and Technology;2014
2. Overview of 3C-SiC Crystalline Growth;Materials Science Forum;2010-04
3. Microstructural investigation of 3C-SiC islands grown by VLS mechanism on 6H-SiC substrate;Journal of Crystal Growth;2008-04
4. Controllable 6H-SiC to 4H-SiC polytype transformation during PVT growth;Journal of Crystal Growth;2007-02
5. Growth of Cubic Silicon Carbide Crystals from Solution;Materials Science Forum;2006-10
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