Distribution of Ge in high concentration Ge-doped Czochralski-Si crystal
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. Interstitial oxygen in GeSi alloys
2. Float zone growth and characterization of Ge1−xSix (x⩽10at%) single crystals
3. SixGe1 − x single crystals grown by the RF-heated float zone technique
4. Czochralski growth of Si- and Ge-rich SiGe single crystals
5. Czochralski growth of bulk crystals of Ge1−xSix alloys
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3. Numerical Simulation of Thermal-Solutal Capillary-Buoyancy Flow of Ge1–xSix Single Crystals Driven by Surface-Tension and Rotation in a Czochralski Configuration;Crystals;2019-04-22
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