Interstitial oxygen in GeSi alloys
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. Czochralski growth of Ge1 − xSix alloy crystals
2. Czochralski growth of bulk crystals of Ge1-xSix alloys
3. Czochralski growth of bulk crystals of Ge1−xSix alloys
4. Czochralski growth of GeSi bulk alloy crystals
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1. Infrared properties of interstitial oxygen in homogeneous bulk Si1−XGeX crystals;Journal of Crystal Growth;2021-07
2. Ge-rich graded SiGe waveguides and interferometers from 5 to 11 µm wavelength range;Optics Express;2020-04-14
3. SixGe1-x Bulk Crystals;Reference Module in Materials Science and Materials Engineering;2016
4. Oxygen defect processes in silicon and silicon germanium;Applied Physics Reviews;2015-06
5. Vacancy-oxygen defects in p-type Si1−xGex;Journal of Applied Physics;2014-10-07
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