Author:
di Forte Poisson M.-A.,Magis M.,Tordjman M.,Aubry R.,Sarazin N.,Peschang M.,Morvan E.,Delage S.L.,di Persio J.,Quéré R.,Grimbert B.,Hoel V.,Delos E.,Ducatteau D.,Gaquiere C.
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference3 articles.
1. An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer
2. LPMOCVD growth of GaN on silicon carbide
3. M.-A. di Forte-Poisson, M. Magis, M. Tordjman, R. Aubry, M. Peschang, S.L. Delage, J. Di Persio, B. Grimbert, V. Hoel, E. Delos, D. Ducatteau, C. Gaquière, Proceedings of MRS Fall Meeting, Boston, 2003.
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