Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

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Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition

Published:2004-06 Issue:4 Volume:266 Page:423-428
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Han Xiuxun,Chen Zhen,Li Dabing,Wu Jiejun,Li Jiemin,Sun Xuehao,Liu Xianglin,Han Peide,Wang Xiaohui,Zhu Qinsheng,Wang Zhanguo

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference19 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. Characteristics of InGaN multi‐quantum‐well‐structure laser diodes

3. GROWTH, STRUCTURES, AND OPTICAL PROPERTIES OF III-NITRIDE QUANTUM DOTS

4. Exciton localization and the Stokes’ shift in InGaN epilayers

5. Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hydrogenic donor-related binding energy and diamagnetic susceptibility in multilayer cylindrical quantum dots under hydrostatic pressure;Applied Physics A;2023-07-14

2. Incorporation of self assembled In-rich InGaN nanostructure to achieve redshift in InGaN/GaN heterostructures;physica status solidi (c);2007-06

3. Effects of different modified underlayer surfaces on growth and optical properties of InGaN quantum dots;Vacuum;2005-02

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