Effects of different modified underlayer surfaces on growth and optical properties of InGaN quantum dots-Reference-Cited by-同舟云学术

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Effects of different modified underlayer surfaces on growth and optical properties of InGaN quantum dots

Published:2005-02 Issue:3 Volume:77 Page:307-314
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Han Xiuxun,Li Jiemin,Wu Jiejun,Wang Xiaohui,Li Dabing,Liu Xianglin,Han Peide,Zhu Qinsheng,Wang Zhanguo

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference19 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. GROWTH, STRUCTURES, AND OPTICAL PROPERTIES OF III-NITRIDE QUANTUM DOTS

3. Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer

4. Determination of photoluminescence mechanism in InGaN quantum wells

5. Multidimensional quantum well laser and temperature dependence of its threshold current

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1. Fabrication of large-scale uniform submicron inverted pyramid pit arrays on silicon substrates by laser interference lithography;Vacuum;2019-07

2. Microstructural and compositional analyses of GaN-based nanostructures;physica status solidi (b);2011-07-21

3. Structural investigation of growth and dissolution of nano-islands grown by molecular beam epitaxy;Journal of Crystal Growth;2008-02

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