Study of 3C-SiC nucleation on (0001) 6H-SiC nominal surfaces by the CF-PVT method
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Bulk crystal growth of cubic silicon carbide by sublimation epitaxy
2. Cubic Silicon Carbide (3C-SiC): Structure and Properties of Single Crystals Grown by Thermal Decomposition of Methyl Trichlorosilane in Hydrogen
3. 3C-SiC Single-Crystal Films Grown on 6-Inch Si Substrates
4. An examination of double positioning boundaries and interface misfit in beta‐SiC films on alpha‐SiC substrates
5. Continuous Feed Physical Vapor Transport
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1. Structural characteristics of 3C–SiC thin films grown on Si-face and C-face 4H–SiC substrates by high temperature chemical vapor deposition;Vacuum;2023-01
2. Super-V-shaped structure on 3C-SiC grown on the C-face of 4H-SiC;Journal of Physics D: Applied Physics;2016-07-25
3. Sublimation Growth of Hexagonal and Cubic SiC Layers;Reference Module in Materials Science and Materials Engineering;2016
4. Interface Shape: A Possible Cause of Polytypes Destabilization during Seeded Sublimation Growth of 15R-SiC;Materials Science Forum;2014-10
5. Cubic SiC formation on the C-face of 6H–SiC (0001) substrates;Journal of Crystal Growth;2012-06
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