MOVPE growth experiments of the novel (GaIn)(NP)/GaP material system
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. (Ga, In)(N, As)-fine structure of the band gap due to nearest-neighbor configurations of the isovalent nitrogen
2. Generation and suppression process of crystalline defects in GaP layers grown on misoriented Si(100) substrates
3. Growth studies of GaP on Si by gas-source molecular beam epitaxy
4. Growth of GaP on Si substrates by solid-source molecular beam epitaxy
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