MOCVD growth of InGaAsP/InGaAs multi-step-quantum well structure for QWIP application by using TBA and TBP in N2 ambient
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Replacement of hydrides by TBAs and TBP for the growth of various III–V materials in production scale MOVPE reactors
2. Carbon-doped GaInP/GaAs heterojunction bipolar transistors grown by metalorganic chemical vapor deposition using nitrogen as the carrier gas
3. Metal organic vapour-phase epitaxy (MOVPE) growth of InP and InGaAs using tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP) in N2 ambient
4. The role of N2 and H2 as carrier gas on the selective area MOVPE of InP-based heterostructures using TBAs and TBP as group-V sources
5. Intersubband Transition in Quantum Wells;Liu,2000
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1. Equipment and Manufacturability Issues in Chemical Vapor Deposition Processes;Handbook of Thin Film Deposition;2018
2. Equipment and Manufacturability Issues in CVD Processes;Handbook of Thin Film Deposition;2012
3. Precursors to Semiconducting Materials;Comprehensive Organometallic Chemistry III;2007
4. MOVPE growth of Al-free 808nm high power lasers using TBP and TBA in pure N2 ambient;Journal of Crystal Growth;2006-02
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