Metal organic vapour-phase epitaxy (MOVPE) growth of InP and InGaAs using tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP) in N2 ambient
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. Submilliamp threshold 1.3 µm strained MQW lasers with novel p-substrate buried-heterostructure grown by MOVPE using TBA and TBP
2. M. Gerhardt, G. Kirpal, G. Benndorf, R. Schwabe, R. Franzheld, V. Gottschalch, J. Kovac, M. Druminski, EW MOVPE VII, Berlin, June 1997, paper H12.
3. Thermodynamic interpretation of quaternary (InGaAsP) layer uniformity grown by low‐pressure metalorganic vapor phase epitaxy
4. MOVPE growth of GaAs using a N2 carrier
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1. MOCVD Growth and Fabrication of High Power MUTC Photodiodes Using InGaAs-InP System;Journal of Nanomaterials;2015
2. Optical properties of InP nanowires on Si substrates with varied synthesis parameters;Applied Physics Letters;2008
3. Precursors to Semiconducting Materials;Comprehensive Organometallic Chemistry III;2007
4. MOVPE growth of Al-free 808nm high power lasers using TBP and TBA in pure N2 ambient;Journal of Crystal Growth;2006-02
5. MOCVD growth of InGaAsP/InGaAs multi-step-quantum well structure for QWIP application by using TBA and TBP in N2 ambient;Journal of Crystal Growth;2004-08
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