Heteroepitaxial growth of LaAlO3 films on Si (100) by laser molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. High quality, high-k gate dielectric: amorphous LaAlO3 thin films grown on Si(100) without Si interfacial layer
2. Formation of LaAlO3 films on Si(100) substrates using molecular beam deposition
3. Growth Mode of Superconducting La 2- x Sr x Cu 1+ y O 4 Thin Films on LaAlO 3 Substrate
4. YBa2Cu3O7-x/SrTiO3//LaAlO3 heterostructures obtained by injection MOCVD
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1. Carrier injection behaviors from a band semiconductor to strongly correlated electron system in perovskite lanthanum vanadate/silicon junctions;Applied Physics Letters;2022-06-06
2. Growth of LaAlO3 on silicon via an ultrathin SrTiO3 buffer layer by molecular-beam epitaxy;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2018-03
3. Structural, Dielectric, and Interface Properties of Crystalline Barium Silicate Films on Si(100): A Robust High-κMaterial;Physical Review Applied;2016-05-09
4. Atomic layer deposition of perovskite oxides and their epitaxial integration with Si, Ge, and other semiconductors;Applied Physics Reviews;2015-12
5. First-Principles Investigation of the Electronic Properties and Stabilities of the LaAlO3 (001) and (110) (1 × 1) Polar Terminations;The Journal of Physical Chemistry C;2015-04-15
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