Carrier injection behaviors from a band semiconductor to strongly correlated electron system in perovskite lanthanum vanadate/silicon junctions-Reference-Cited by-同舟云学术

Carrier injection behaviors from a band semiconductor to strongly correlated electron system in perovskite lanthanum vanadate/silicon junctions

Published:2022-06-06 Issue:23 Volume:120 Page:232106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hotta Yasushi¹^ORCID,Nemoto Ryoichi¹,Muranushi Keisuke¹,Zhang Yujun²^ORCID,Wadati Hiroki²^ORCID,Muraoka Keita¹,Sakanaga Hiroshi¹,Yoshida Haruhiko¹,Arafune Koji³^ORCID,Tabata Hitoshi⁴^ORCID

Affiliation:

1. Department of Electrical Engineering and Computer Science, University of Hyogo, Himeji, Hyogo 671-2280, Japan

2. Institute for Solid State Physics (ISSP), University of Tokyo, Kashiwa, Chiba 277-8582, Japan

3. Department of Chemical Engineering and Materials Science, University of Hyogo, Himeji, Hyogo 671-2280, Japan

4. Department of Electrical Engineering, University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan

Abstract

The interface properties of strongly correlated electron system/band semiconductor junctions were investigated in the La1−xSrxVO3/p-Si(100) structure. Spectroscopic observations show that the electronic structure of the interface is typical of insulator/semiconductor junctions for x ≤ 0.2 and Schottky junctions for x ≥ 0.25. For the forward current density–bias voltage (J–V) characteristics, energy barriers that were otherwise unexplainable by spectroscopy were estimated from the thermionic emission model fitting of the J–V characteristics, indicating that the injected carriers from Si to La1−xSrxVO3 can also feel the correlation force of Coulomb repulsion at the interface.

Funder

Core Research for Evolutional Science and Technology

Japan Society for the Promotion of Science

New Energy and Industrial Technology Development Organization

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0094708

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