Study of twisting of β-Ga2O3 crystals based on optical absorption and thermal conductivity anisotropy in the crystals grown by the Czochralski method

Author:

Kakimoto KoichiORCID,Takahashi Isao,Tomida Taketoshi,Kochurikhin Vladimir V.ORCID,Kamada KeiORCID,Nakano Satoshi,Yoshikawa Akira

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. β-Ga2O3 for wide-bandgap electronics and optoelectronics;Galazka;Semicond. Sci. Technol.,2018

2. A review of Ga2O3 materials, processing, and devices;Pearton;Appl. Phys. Rev.,2018

3. High-quality β-Ga 2 O 3 single crystals grown by edge-defined film-fed growth;Kuramata;Jpn. J. Appl. Phys.,2016

4. Numerical modelling of the czochralski growth of β-Ga2O3;Miller;Crystals,2017

5. Z. Galazka Gallium Oxide Materials Properties Crystal Growth and Devices Springer p-29 (2020) ISSN 2196-2812.

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