Understanding Al incorporation into 4H-SiC during epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. Promise and Challenges of High-Voltage SiC Bipolar Power Devices
2. Site‐competition epitaxy for superior silicon carbide electronics
3. Extended abstracts;Kuroda,1987
4. Impurity Incorporation Mechanism in Step-Controlled Epitaxy Growth Temperature and Substrate Off-Angle Dependence
5. p-Type Doping of 4H- and 3C-SiC Epitaxial Layers with Aluminum
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2. Models for Impurity Incorporation during Vapor-Phase Epitaxy;Materials Science Forum;2022-05-31
3. Surface Uniformity of Wafer-Scale 4H-SiC Epitaxial Layers Grown under Various Epitaxial Conditions;Coatings;2022-04-27
4. Growth and doping of silicon carbide with germanium: a review;Critical Reviews in Solid State and Materials Sciences;2021-03-24
5. Homoepitaksja węglika krzemu dla przyrządów mocy w Sieci Badawczej Łukasiewicz - ITME;PRZEGLĄD ELEKTROTECHNICZNY;2019-09-05
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