p-Type Doping of 4H- and 3C-SiC Epitaxial Layers with Aluminum-Reference-Cited by-同舟云学术

p-Type Doping of 4H- and 3C-SiC Epitaxial Layers with Aluminum

Published:2016-05 Issue: Volume:858 Page:137-142
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Zielinski Marcin¹^ORCID,Arvinte Roxana¹,Chassagne Thierry¹,Michon Adrien²,Portail Marc²,Kwasnicki Pawel³,Konczewicz Leszek³,Contreras Sylvie³,Juillaguet Sandrine³,Peyre Hervé³^ORCID

Affiliation:

1. NOVASiC

2. RHEA-CNRS UPR10

3. CNRS, Laboratoire Charles Coulomb UMR 5221

Abstract

Exhaustive experimental study of aluminum incorporation in epitaxial 4H-SiC and 3C‑SiC films grown by chemical vapor deposition (CVD) was performed. The influence of polytype and substrate orientation was verified. Role of principal process conditions (growth temperature and pressure, deposition rate, chemical environment) was investigated in details. Finally, the evolution of optical properties of resulting SiC films with Al content was examined.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.858.137.pdf

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