p-Type Doping of 4H- and 3C-SiC Epitaxial Layers with Aluminum

Author:

Zielinski Marcin1ORCID,Arvinte Roxana1,Chassagne Thierry1,Michon Adrien2,Portail Marc2,Kwasnicki Pawel3,Konczewicz Leszek3,Contreras Sylvie3,Juillaguet Sandrine3,Peyre Hervé3ORCID

Affiliation:

1. NOVASiC

2. RHEA-CNRS UPR10

3. CNRS, Laboratoire Charles Coulomb UMR 5221

Abstract

Exhaustive experimental study of aluminum incorporation in epitaxial 4H-SiC and 3C‑SiC films grown by chemical vapor deposition (CVD) was performed. The influence of polytype and substrate orientation was verified. Role of principal process conditions (growth temperature and pressure, deposition rate, chemical environment) was investigated in details. Finally, the evolution of optical properties of resulting SiC films with Al content was examined.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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