Affiliation:
1. NOVASiC
2. RHEA-CNRS UPR10
3. CNRS, Laboratoire Charles Coulomb UMR 5221
Abstract
Exhaustive experimental study of aluminum incorporation in epitaxial 4H-SiC and 3C‑SiC films grown by chemical vapor deposition (CVD) was performed. The influence of polytype and substrate orientation was verified. Role of principal process conditions (growth temperature and pressure, deposition rate, chemical environment) was investigated in details. Finally, the evolution of optical properties of resulting SiC films with Al content was examined.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
13 articles.
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