Absolute surface energies of semipolar planes of AlN during metalorganic vapor phase epitaxy growth
Author:
Funder
JSPS
CREST-JST
National Institutes of Natural Sciences
Kyushu University
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference36 articles.
1. Spontaneous polarization and piezoelectric constants of III-V nitrides
2. Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes
3. Ultraviolet light-emitting diodes based on group three nitrides
4. 222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire
5. 100 mW deep-ultraviolet emission from aluminium-nitride-based quantum wells pumped by an electron beam
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