Reduction of morphological defects in 4H-SiC epitaxial layers-Reference-Cited by-同舟云学术

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Reduction of morphological defects in 4H-SiC epitaxial layers

Published:2019-01 Issue: Volume:506 Page:108-113
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Li Yun,Zhao Zhifei,Yu Le,Wang Yi,Zhou Ping,Niu Yingxi,Li Zhonghui,Chen Yunfeng,Han Ping

Funder

National Key Research and Development Program

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference19 articles.

1. Investigation of defect formation in 4H-SiC epitaxial growth by X-ray topography and defect selective etching

2. Bulk and epitaxial growth of silicon carbide

3. Conversion of basal plane dislocations to threading edge dislocations in 4H-SiC epilayers by high temperature annealing

4. Direct observation of basal-plane to threading-edge dislocation conversion in 4H-SiC epitaxy

5. Fast homoepitaxial growth of 4H-SiC with low basal-plane dislocation density and low trap concentration by hot-wall chemical vapor deposition

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Advances and challenges in 4H silicon carbide: defects and impurities;Physica Scripta;2024-08-01

2. The effect of shear on nucleation and movement of basal plane dislocations in 4H-SiC;Journal of Applied Physics;2024-07-25

3. Optimizing the chemical vapor deposition process of 4H–SiC epitaxial layer growth with machine-learning-assisted multiphysics simulations;Case Studies in Thermal Engineering;2024-07

4. Analysis of Effects of Defects on Degradation Mechanism of 1200-V/40-A 4H-SiC Junction Barrier Schottky Diodes Induced by High-Reserve Bias Stress;IEEE Transactions on Electron Devices;2024-05

5. Insights into the effect of susceptor rotational speed in CVD reactor on the quality of 4H-SiC epitaxial layer on homogeneous substrates;Materials Today Communications;2024-03

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