Improved crystalline quality of AlN epitaxial layer on sapphire by introducing TMGa pulse flow into the nucleation stage-Reference-Cited by-同舟云学术

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Improved crystalline quality of AlN epitaxial layer on sapphire by introducing TMGa pulse flow into the nucleation stage

Published:2018-05 Issue: Volume:490 Page:56-60
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Wu Hualong^ORCID,Wang Hailong,Chen Yingda,Zhang Lingxia,Chen Zimin,Wu Zhisheng,Wang Gang,Jiang Hao

Funder

National key R&D Program of China

State Key Program of National Natural Science Foundation of China

Science and Technology Major Project of Guang-dong Province

Guangdong Natural Science Foundation

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference25 articles.

1. Growth of high-quality AlN with low pit density on SiC substrates

2. High-quality AlGaN layers over pulsed atomic-layer epitaxially grown AlN templates for deep ultraviolet light-emitting diodes

3. 231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A review of oriented wurtzite-structure aluminum nitride films;Journal of Alloys and Compounds;2024-06

2. In-situ thermal cleaning of the sapphire substrate and temperature effect on epitaxial AlN;Vacuum;2022-11

3. The influence of TMGa pre-flow time and amount as surfactant on the structural and optical properties of AlN epilayer;Micro and Nanostructures;2022-08

4. Recent Advances in Fabricating Wurtzite AlN Film on (0001)-Plane Sapphire Substrate;Crystals;2021-12-27

5. Study on the morphology of dislocation-related etch pits on pyramidal faces of KDP crystals;CrystEngComm;2021

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