Improved crystal quality of semipolar AlN by employing a thermal annealing technique with MOVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference27 articles.
1. Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes
2. Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes
3. AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%
4. 270 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Over 60 mW Continuous Wave Output Power
5. Performance and Reliability of Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy
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1. Epitaxy of (11–22) AlN Films on a Sputtered Buffer Layer with Different Annealing Temperatures via Hydride Vapour Phase Epitaxy;Materials;2024-01-09
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4. High-Temperature Annealing Assisted High-Quality Semipolar (112̅2) AlN Film for Vacuum Ultraviolet Detectors;Crystal Growth & Design;2023-11-17
5. Temperature-Dependent Optical Behaviors and Demonstration of Carrier Localization in Polar and Semipolar AlGaN Multiple Quantum Wells;Crystals;2023-07-08
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