Understanding and controlling Ga contamination in InAlN barrier layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Characterization of different-Al-content Al x Ga 1–x N/GaN heterostructures and high-electron-mobility transistors on sapphire;Arulkumaran;J. Vacuum Sci. Technol. B,2003
2. AlGaN/GaN-based HEMTs failure physics and reliability: mechanisms affecting gate edge and Schottky junction;Zanoni;IEEE Trans. Electron Dev.,2013
3. Power electronics on InAlN/(In) GaN: prospect for a record performance;Kuzmík;IEEE Electron Dev. Lett.,2001
4. Growth by MOCVD of In (Ga) AlN alloys, and a study of gallium contamination in these layers under nitrogen and hydrogen carrier gas;Bouveyron;J. Crystal Growth,2017
5. Epitaxial growth of InAlN/GaN heterostructures on silicon substrates in a single wafer rotating disk MOCVD reactor;Lu;MRS Adv.,2017
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2. Avoiding Gallium Pollution in Close‐Coupled Showerhead Reactors, Alternative Process Routes;physica status solidi (a);2023-04-14
3. H2 based etching of GaN for re-grown gallium-free InAlN barriers giving very low 2DEG sheet resistance of 185 Ω/sq;Journal of Crystal Growth;2022-06
4. Ga-free AlInN films growth by close-coupled showerhead metalorganic chemical vapor deposition;Micro and Nanostructures;2022-05
5. Electrical activity at the AlN/Si Interface: identifying the main origin of propagation losses in GaN-on-Si devices at microwave frequencies;Scientific Reports;2020-08-25
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