Smoothness and cleanliness of the GaAs (100) surface after thermal desorption of the native oxide for the synthesis of high mobility structures using molecular beam epitaxy-Reference-Cited by-同舟云学术

Smoothness and cleanliness of the GaAs (100) surface after thermal desorption of the native oxide for the synthesis of high mobility structures using molecular beam epitaxy

Published:2012-10 Issue: Volume:356 Page:46-52
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Lee J.J.D.,West K.W.,Baldwin K.W.,Pfeiffer L.N.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. Measurement of GaAs surface oxide desorption temperatures

2. Mass spectrometry during molecular-beam epitaxy: An alternative to reflection high-energy electron diffraction

3. Oxide thickness effect and surface roughening in the desorption of the oxide from GaAs

4. X‐ray photoelectron spectroscopic study of the oxide removal mechanism of GaAs (100) molecular beam epitaxial substrates ininsituheating

5. X-ray photoelectron spectroscopy study of GaAs (001) surface thermocleaning prior to molecular beam epitaxy

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