MOVPE growth, optical and electrical characterization of thick Mg-doped InGaN layers-Reference-Cited by-同舟云学术

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MOVPE growth, optical and electrical characterization of thick Mg-doped InGaN layers

Published:2013-05 Issue: Volume:370 Page:2-6
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Tuna Ö.,Hahn H.,Kalisch H.,Giesen C.,Vescan A.,Rzheutski M.V.,Pavlovskii V.N.,Lutsenko E.V.,Yablonskii G.P.,Heuken M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference20 articles.

1. Characteristics of Green Light-Emitting Diodes Using an InGaN:Mg/GaN:Mg Superlattice as p-Type Hole Injection and Contact Layers

2. Surface morphology control of green LEDs with p-InGaN layers grown by metalorganic chemical vapor deposition

3. InGaN/GaN multiple quantum well solar cells with long operating wavelengths

4. Hydrogen generation by solar water splitting using p-InGaN photoelectrochemical cells

5. Advantages of GaN based light-emitting diodes with a p-InGaN hole reservoir layer

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A density functional theory study on the gas-phase formation of InGaN by metalorganic chemical vapor deposition;Journal of Crystal Growth;2024-04

2. Rare‐Earth Lanthanum Tailoring Mott–Schottky Heterojunction by Sulfur Vacancy Modification as a Bifunctional Electrocatalyst for Zinc–Air Battery;Small Structures;2022-11-23

3. Recent advances and challenges in the MOCVD growth of indium gallium nitride: A brief review;Materials Science in Semiconductor Processing;2022-06

4. Thick (~1 μm) p-type InxGa1-xN (x ~ 0.36) grown by MOVPE at a low temperature (~570 °C);physica status solidi (b);2015-02-17

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