Growth of zinc blende GaAs/AlGaAs heterostructure nanowires on Si substrate by using AlGaAs buffer layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference34 articles.
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1. Photoluminescence emission in the red band at low temperatures in type-island layers of the Al0.32Ga0.68 As/Al0.29Ga0.71As/GaAs structure obtained via liquid phase epitaxy, and its description by the mechanism of Stranski-Krastanov growth;Optical Materials;2022-12
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