Effect of surface defects on InGaAs/InAlAs Quantum Cascade mesa current–voltage characteristics-Reference-Cited by-同舟云学术

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Effect of surface defects on InGaAs/InAlAs Quantum Cascade mesa current–voltage characteristics

Published:2012-08 Issue:1 Volume:353 Page:35-38
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Aung Nyan L.,Huang Xue,Charles Williams O.,Yao Nan,Gmachl Claire F.

Funder

MIRTHE

NSF

NSF-MRSEC

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference10 articles.

1. On the origin and elimination of macroscopic defects in MBE films;Wood;Journal of Crystal Growth,1981

2. Classification and origins of GaAs oval defects grown by molecular beam epitaxy;Fujiwara;Journal of Crystal Growth,1987

3. Classification of surface defects on GaAs grown by molecular beam epitaxy;Nanbu;Journal of the Electrochemical Society,1986

4. A comprehensive study and methods of elimination of oval defects in MBE-GaAs;Chand;Journal of Crystal Growth,1990

5. Electrical properties of oval defects in GaAs grown by MBE;Shinohara;Japanese Journal of Applied Physics,1984

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. MBE growth optimization of InAs (001) homoepitaxy;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2013-05

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