MBE growth optimization of InAs (001) homoepitaxy-Reference-Cited by-同舟云学术

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MBE growth optimization of InAs (001) homoepitaxy

Published:2013-05 Issue:3 Volume:31 Page:03C135
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Ye Hao,Li Lu,Hinkey Robert T.,Yang Rui Q.,Mishima Tetsuya D.,Keay Joel C.,Santos Michael B.,Johnson Matthew B.

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4804397

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced minority carrier lifetime in bulk hydrogen-passivated InAsSbBi;Applied Physics Letters;2024-01-08

2. Multi-technique characterisation of InAs-on-GaAs wafers with circular defect pattern;Opto-Electronics Review;2024-01-03

3. Low threshold InAs-based interband cascade lasers grown by MBE;Journal of Crystal Growth;2022-05

4. Strain-balanced InAs/GaSb superlattices used for the detection of VLWIR radiation;Infrared Physics & Technology;2022-05

5. A Study of Defects in InAs/GaSb Type-II Superlattices Using High-Resolution Reciprocal Space Mapping;Materials;2021-08-30

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