Growth of thick GaN layer on ZnAl2O4 spinel layer by HVPE-Reference-Cited by-同舟云学术

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Growth of thick GaN layer on ZnAl2O4 spinel layer by HVPE

Published:2013-05 Issue: Volume:370 Page:92-96
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Yoo Jinyeop,Choi Sungkuk,Jung Soohoon,Cho Youngji,Lee Jeungwoo,Lee Sangtae,Lee Wonjae,Lee Hyunjae,Kim Siyoung,Chang Jiho

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference25 articles.

1. The influences of supersaturation on LPE growth of GaN single crystals using the Na flux method

2. Impacts of dislocation bending and impurity incorporation on the local cathodoluminescence spectra of GaN grown by ammonothermal method

3. Freestanding high quality GaN substrate by associated GaN nanorods self-separated hydride vapor-phase epitaxy

4. Analysis of the stress distribution in the nonuniformly bent GaN thin film grown on a sapphire substrate

5. Thermo-mechanical solution of film/substrate systems under local thermal load and application to laser lift-off of GaN/sapphire structures

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Polarity control of GaN grown on pulsed-laser-deposited AlN/GaN template by metalorganic vapor phase epitaxy;Japanese Journal of Applied Physics;2016-03-31

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