Temperature dependence of crystalline SiGe growth on sapphire (0001) substrates by sputtering-Reference-Cited by-同舟云学术

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Temperature dependence of crystalline SiGe growth on sapphire (0001) substrates by sputtering

Published:2012-08 Issue:1 Volume:353 Page:124-128
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kim Hyun-Jung,Bae Hyung-Bin,Park Yeonjoon,Lee Kunik,Choi Sang H.

Funder

collaborative agreement between NASA Langley Research Center and Federal Highway Administration, Department of Transportation

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference17 articles.

1. Rhombohedral epitaxy of cubic SiGe on trigonal c-plane sapphire

2. Strain relaxation and ordering in SiGe layers grown on (100), (111), and (110) Si surfaces by molecular‐beam epitaxy

3. Mechanisms controlling growth quality of Si–Ge superlattices in different growth directions

4. Orientation dependence of growth quality in strained-layer superlattices: A model-potential study of the Si-Ge system

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Twinned growth of ScN thin films on lattice-matched GaN substrates;Materials Research Bulletin;2021-11

2. GaAs epitaxial growth on R-plane sapphire substrate;Journal of Crystal Growth;2020-10

3. Growth and Characterization of SiGe on c-Plane Sapphire Using a Chemical Vapor Deposition System;Journal of Electronic Materials;2020-05-22

4. High mobility Si0.15Ge0.85 growth by using the molten target sputtering (MTS) within heteroepitaxy framework;Scientific Reports;2019-08-09

5. Crystalline GaAs Thin Film Growth on a c-Plane Sapphire Substrate;Crystal Growth & Design;2019-08-02

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