High mobility Si0.15Ge0.85 growth by using the molten target sputtering (MTS) within heteroepitaxy framework
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-019-47723-2.pdf
Reference43 articles.
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4. Gomez, L., Ni Chleirigh, C., Hashemi, P. & Hoyt, L. Enhanced hole mobility in high Ge content asymmetrically strained-SiGe p-MOSFETs. IEEE Electron Device Letters 31(8), 782–784 (2010).
5. O’Regan, T. & Fischetti, M. Electron mobility in silicon and germanium inversion layers: The role of remote phonon scattering. J. Comput. Electron. 6, 81–84 (2007).
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