Rhombohedral epitaxy of cubic SiGe on trigonal c-plane sapphire
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference24 articles.
1. High mobility SiGe/Si transistor structures on sapphire substrates using ion implantation
2. Extremely high electron mobility in Si/SiGe modulation‐doped heterostructures
3. SiGe pMODFETs on silicon-on-sapphire substrates with 116 GHz f/sub max/
4. In situ relaxed Si[sub 1−x]Ge[sub x] epitaxial layers with low threading dislocation densities grown on compliant Si-on-insulator substrates
5. The growth of SiGe on sapphire using rapid thermal chemical vapor deposition
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