Ab initio-based approach to incorporation of N atoms on GaAs(001) surfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. Fine structure splitting of isoelectronic bound excitons in nitrogen-doped GaAs
2. Atomically controlled doping of nitrogen on GaAs(001) surfaces
3. Atomic-scale nature of the (3×3)-ordered GaAs(001):N surface prepared by plasma-assisted molecular-beam epitaxy
4. Surface reconstruction of GaAs() nitrided under the controlled As partial pressure
5. Atomic-scale characterization of the N incorporation on GaAs(001)
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1. Morphological and chemical instabilities of nitrogen delta-doped GaAs/(Al, Ga)As quantum wells;Applied Physics Letters;2017-05-15
2. Recent Progress in Computational Materials Science for Semiconductor Epitaxial Growth;Crystals;2017-02-09
3. Ab initio-Based Approach to Crystal Growth;Handbook of Crystal Growth;2015
4. Ab initio-Based Approach to N-pair Formation on GaAs(001)-(2×4) Surfaces;e-Journal of Surface Science and Nanotechnology;2014
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