Fine structure splitting of isoelectronic bound excitons in nitrogen-doped GaAs
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.77.193102/fulltext
Reference16 articles.
1. Band Anticrossing in GaInNAs Alloys
2. Theory of electronic structure evolution in GaAsN and GaPN alloys
3. Sharp photoluminescence lines from nitrogen atomic‐layer‐doped GaAs
4. Bound exciton states of isoelectronic centers in GaAs:N grown by an atomically controlled doping technique
5. Spectroscopic study of dark excitons inInxGa1−xAsself-assembled quantum dots by a magnetic-field-induced symmetry breaking
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