Intrinsic limits governing MBE growth of Ga-assisted GaAs nanowires on Si(111)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference28 articles.
1. Semiconductor nanowires: A platform for nanoscience and nanotechnology
2. VAPOR‐LIQUID‐SOLID MECHANISM OF SINGLE CRYSTAL GROWTH
3. Epitaxial growth of silicon nanowires using an aluminium catalyst
4. Nucleation mechanism of gallium-assisted molecular beam epitaxy growth of gallium arsenide nanowires
5. Self-catalyzed growth of GaAs nanowires on cleaved Si by molecular beam epitaxy
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