Role of Readsorption in the Formation of Vertical AIIIBV Nanowires with Self-Catalytic Growth-Reference-Cited by-同舟云学术

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Role of Readsorption in the Formation of Vertical AIIIBV Nanowires with Self-Catalytic Growth

Published:2020-05 Issue:3 Volume:49 Page:166-172
ISSN:1063-7397
Container-title:Russian Microelectronics
language:en
Short-container-title:Russ Microelectron

Author:

Nastovjak A. G.,Usenkova A. G.,Shwartz N. L.,Neizvestny I. G.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1134/S106373972003004X.pdf

Reference30 articles.

1. Couteau, C., Larrue, A., Wilhelm, C., and Soci, C., Nanowire lasers, Nanophotonics, 2015, vol. 4, pp. 90–107.

2. Wallentin, J., Anttu, N., Asoli, D., Huffman, M., Aberg, I., Magnusson, M.H., Siefer, G., Fuss-Kailuweit, P., Dimroth, F., Witzigmann, B., Xu, H.Q., Samuelson, L., Deppert, K., and Borgstrom, M.T., InP nanowire array solar cells achieving 13.8% efficiency by exceeding the ray optics limit, Science (Washington, DC, U. S.), 2013, vol. 339, pp. 1057–1060.

3. Tatebayashi, J., Kako, S., Ho, J., Ota, Y., Iwamoto, S., and Arakawa, Y., Room-temperature lasing in a single nanowire with quantum dots, Nat. Photon., 2015, vol. 9, pp. 501–505.

4. Colombo, C., Spirkoska, D., Frimmer, M., Abstreiter, G., and Morral, A., Ga-assisted catalyst-free growth mechanism of GaAs nanowires by molecular beam epitaxy, Phys. Rev. B, 2008, vol. 77, p. 155326.

5. Rieger, T., Heiderich, S., Lenk, S., Lepsa, M.I., and Grutzmacher, D., Ga-assisted MBE growth of GaAs nanowires using thin HSQ layer, J. Cryst. Growth, 2012, vol. 353, pp. 39–46.

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1. Simulation of GaAs nanowire annealing;Computational Materials Science;2023-09

2. Monte Carlo Simulation of Alternate Pulsed Epitaxial Growth of GaAs Nanowires;physica status solidi (b);2022-04-12

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