Growth kinetics on silicon facets during low-temperature crystallization from indium solution
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference23 articles.
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2. Surface reconstruction of In on Si(111);Kraft;Physical Review B,1997
3. The growth of indium on the Si(111) surface studied by X-ray reflectivity and Auger electron spectroscopy;Finney;Surface Science,1992
4. Indium growth on reconstructed Si(111) 3×3 and 4×1 In surfaces;Vlachos;Journal of Physical Chemistry C,2010
5. Giant metal compression at liquid–solid (PbSi, InSi) Schottky junctions;Reichert;Physical Review Letters,2007
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1. Interfacial charge transfer and Schottky barriers at c-Si/a-In heterojunctions;Journal of Physics Communications;2022-08-01
2. Crystalline silicon on glass by steady-state solution growth using indium as solvent;Applied Physics A;2015-04-02
3. Liquid-Phase Epitaxy;Handbook of Crystal Growth;2015
4. Controlling the spectroscopic parameters of Er3+-doped sodium silicate glass by tuning the Er2O3 and Na2O concentrations;Journal of Alloys and Compounds;2013-05
5. Effect of Na2O concentration on the lifetime of Er3+-doped sodium silicate glass;RSC Advances;2013
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