Indium Growth on Reconstructed Si(111)√3 × √3 and 4 × 1 In Surfaces-Reference-Cited by-同舟云学术

Indium Growth on Reconstructed Si(111)√3 × √3 and 4 × 1 In Surfaces

Published:2010-09-22 Issue:41 Volume:114 Page:17693-17702
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Vlachos Dimitrios¹,Kamaratos Mattheos¹,Foulias Stylianos D.¹,Bondino Federica¹,Magnano Elena¹,Malvestuto Marco¹

Affiliation:

1. Department of Physics, University of Ioannina, P.O. Box 1186, GR-451 10 Ioannina, Epirus, Greece, IOM-CNR, Laboratorio Nazionale TASC, S.S. 14, km 163.5, I-34012 Trieste, Italy, and Sincrotrone Trieste, S.S. 14 km 163.5, Area Science Park-Basovizza, 34012 Trieste, Italy

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp105278r

Reference47 articles.

1. Atomic-structure-dependent Schottky barrier at epitaxial Pb/Si(111) interfaces

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3. Surface Reactions of Silicon (111) with Aluminum and Indium

4. Superstructures of submonolayer indium films on silicon (111)7 surfaces

5. Adatoms of indium on Si(111) surfaces: Application of reflection high energy electron diffraction to desorption experiments

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