The growth of indium on the Si(111) surface studied by X-ray reflectivity and Auger electron spectroscopy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference21 articles.
1. Unoccupied surface states revealing the Si(111)√3 √3-Al, -Ga, and -In adatom geometries
2. Metal-induced reconstructions of the silicon(111) surface
3. Indium-induced reconstructions of the Si(111) surface studied by scanning tunneling microscopy
4. Surface X-Ray Scattering during Crystal Growth: Ge on Ge(111)
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2. Growth kinetics of indium metal atoms on Si(1 1 2) surface;Materials Research Bulletin;2015-12
3. Influence of temperature on the controlled growth kinetics and superstructural phase formation of indium on a reconstructed Si (113) 3 × 2 surface;Materials Research Express;2014-02-26
4. Characterization of epitaxially grown indium islands on Si(111);Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2012-11
5. Growth kinetics on silicon facets during low-temperature crystallization from indium solution;Journal of Crystal Growth;2012-05
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