Deep level defects in Ga- and N-polarity GaN grown by molecular beam epitaxy on si(111)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference25 articles.
1. Fundamental energy gap of GaN from photoluminescence excitation spectra
2. Buffer Thickness Contribution to Suppress Vertical Leakage Current With High Breakdown Field (2.3 MV/cm) for GaN on Si
3. Monte Carlo simulation of electron transport in gallium nitride
4. Effects of AlN interlayer on the transport properties of nearly lattice-matched InAlN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor deposition
5. AlGaN/GaN high electron mobility transistors based on InGaN/GaN multiquantum-well structures
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1. Improve the Photocatalytic Hydrogen Production Using ZnS@ZnO Twin‐Junction Structure with Isoelectronic Traps;Advanced Materials Interfaces;2022-06-14
2. Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy;Semiconductors;2018-11-07
3. p-Type Doping of GaN Nanowires Characterized by Photoelectrochemical Measurements;Nano Letters;2017-02-09
4. Behavior of temperature dependent electrical properties of Pd/Au Schottky contact to GaN grown on Si substrate by MBE;Materials Research Express;2016-12-02
5. A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires;Journal of Applied Physics;2016-01-28
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