Control of threading dislocation density at the initial growth stage of AlN on c-sapphire in plasma-assisted MBE-Reference-Cited by-同舟云学术

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Control of threading dislocation density at the initial growth stage of AlN on c-sapphire in plasma-assisted MBE

Published:2013-09 Issue: Volume:378 Page:319-322
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Nechaev D.V.,Aseev P.A.,Jmerik V.N.,Brunkov P.N.,Kuznetsova Y.V.,Sitnikova A.A.,Ratnikov V.V.,Ivanov S.V.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. The current status of ultraviolet laser diodes

2. 276 nm Substrate-Free Flip-Chip AlGaN Light-Emitting Diodes

3. A study on the spectral response of back-illuminated p-i-n AlGaN heterojunction ultraviolet photodetector

4. Three-step growth method for high quality AlN epilayers

5. A study of dislocations in AlN and GaN films grown on sapphire substrates

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1. Effect of stress control by growth adjustment on the edge thread dislocation density of AlN grown on the sapphire;Semiconductor Science and Technology;2024-06-17

2. Improved crystallographic order of ScAlN/GaN heterostructures grown at low temperatures under metal rich surface conditions;Journal of Applied Physics;2024-04-01

3. Heteroepitaxy of N-polar AlN on C-face 4H-SiC: Structural and optical properties;APL Materials;2023-12-01

4. Introduction of dislocation filtering with different ammonia flows in low-temperature grown AlN (< 1200 °C);Micro and Nanostructures;2023-11

5. High growth temperature for AlN by jet stream gas flow metalorganic vapor phase epitaxy;Scientific Reports;2023-02-10

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